| PART |
Description |
Maker |
| SDA9251-2X SDA92512 SDA9251-2XGEG |
868352-Bit Dynamic Sequential Access Memory for Television Applications (TV-SAM) 212K X 4 VIDEO DRAM, 25 ns, PDSO28
From old datasheet system
868352-Bit Dynamic Sequential Access ...
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| SDA9253 SDA9253GEG |
2.6Mbit Dynamic Sequential Access Mem...
2.6 MBit Dynamic Sequential Access Memory for Television Applications (TV-SAM)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| FM93C56EM8 FM93C56LMT8 FM93CS56LMT8 FM93CS56LEM8 F |
(MICROWIRE??Bus Interface) 2048-Bit Serial EEPROM with Data Protect and Sequential Read
RES, 0603, SMD, 0.1%, TKF 11.8K
(MICROWIREBus Interface) 2048-Bit Serial EEPROM with Data Protect and Sequential Read
2048-Bit Serial CMOS EEPROM With Data Protect and Sequential Read(带连续读操作和数据保护的2048位串行CMOS EEPROM)
(MICROWIRE?/a> Bus Interface) 2048-Bit Serial EEPROM with Data Protect and Sequential Read
(MICROWIRE Bus Interface) 2048-Bit Serial EEPROM with Data Protect and Sequential Read
(MICROWIRE?Bus Interface) 2048-Bit Serial EEPROM with Data Protect and Sequential Read
|
Fairchild Semiconductor Corporation
|
| IDT70824S_L IDT70824S45PFI IDT70824L IDT70824L20G |
4K x 16 SARAMTM (Sequential Access / Random Access Memory)
HIGH SPEED 64K (4K X 16 BIT) SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM?)
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM⑩)
|
IDT[Integrated Device Technology]
|
| NM93CS56 |
(MICROWIREBus Interface) 2048-Bit Serial EEPROM with Data Protect and Sequential Read
(MICROWIRE Bus Interface) 2048-Bit Serial EEPROM with Data Protect and Sequential Read
(MICROWIRE⑩ Bus Interface) 2048-Bit Serial EEPROM with Data Protect and Sequential Read
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| FM93CS06V FM93CS06 FM93CS06E |
(MICROWIRE Bus Interface) 256-Bit Serial EEPROM with Data Protect and Sequential Read
(MICROWIRE⑩ Bus Interface) 256-Bit Serial EEPROM with Data Protect and Sequential Read
From old datasheet system
|
FAIRCHILD[Fairchild Semiconductor]
|
| TC511402AJ-60 TC511402AP-60 TC511402ASJ-60 TC51140 |
1,048,576 x 4 BIT DYNAMIC RAM
1048576 x 4 BIT DYNAMIC RAM
Darlington Array IC; Transistor Polarity:NPN; Number of Transistors:7; Collector Emitter Voltage, Vceo:1.3V; Package/Case:16-DIP
|
http://
Toshiba Semiconductor
Toshiba Corporation
|
| HYB5118165BSJ-70 HYB5118165BSJ-60 HYB5118165BSJ-50 |
-1M x 16-Bit Dynamic RAM 1k & 4k Refresh
1M x 16-Bit Dynamic RAM 1k & 4k Refresh (Hyper Page Mode- EDO)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HYB3165160ATL-60 HYB3165160AT-60 HYB3164160AT-40 H |
4M x 16-Bit Dynamic RAM
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70
4M x 16-Bit Dynamic RAM 4M X 16 FAST PAGE DRAM, 50 ns, PDSO50
|
Siemens Semiconductor G...
SIEMENS AG
Siemens Semiconductor Group
|
| Q67100-Q1135 Q67100-Q1136 Q67100-Q1143 Q67100-Q112 |
3.3V 4M x 4-Bit EDO-Dynamic RAM 3.3 4米4位江户动态随机存储器
High-Speed Fully-Differential Amplifiers 8-SOIC -40 to 85 4M X 4 EDO DRAM, 70 ns, PDSO24
3.3V 4M x 4-Bit EDO-Dynamic RAM 4M X 4 EDO DRAM, 50 ns, PDSO24
3.3V 4M x 4-Bit EDO-Dynamic RAM 4M X 4 EDO DRAM, 70 ns, PDSO24
|
http://
SIEMENS A G
SIEMENS AG
|
| MSM56V16160D MSM56V16160DH |
2-Bank 512K×16 Synchronous Dynamic RAM(212K×16动态RAM)
2-Bank x 524288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM
2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM
|
OKI electronic componets
OKI SEMICONDUCTOR CO., LTD.
|
